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Mainstream non‐volatile memory (NVM) devices based on floating gate structures or phase‐change/ferroelectric materials face inherent limitations that compromise their suitability for long‐term data storage. To address this challenge, a novel memory device based on light‐programmed lattice engineering of thin rhenium disulfide (ReS2 ) flakes is proposed. By inducing sulfur vacancies in the ReS2 channel...
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