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A high-linearity power amplifier (PA) for 2.4 GHz Wireless-LAN transceiver is presented. The PA is designed and implemented using a 0.18 um SiGe BiCMOS process. An on-chip adaptive linearizer is comprised of a base-emitter diode of the bias transistor and a bypass capacitor with almost no increase in die area and no extra dc consumption. Besides the linearization function, the active biasing circuit...
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