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We propose a transistor laser with a current confinement aperture (a-TL) formed in a reverse junction layer in the middle of emitter ridge. The a-TLs are studied numerically in comparison with the deep ridge TLs. Data show that in a-TLs, the effects of nonradiative recombination centers on the side walls of the emitter ridge can be reduced greatly due to the confinement of carrier flow in the center...
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