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This paper presents our recent understanding of metal/graphene contact in terms of intrinsic interface obtained from the comparison between resist-free and conventional EB processes, and discusses future challenges to reduce the contact resistivity.
Graphene with a high carrier mobility of more than 10,000 cm2/Vs on SiO2 has attracted much attention as a promising candidate of future high-speed transistor materials. The contact resistance (RC) between graphene and metal electrodes is crucially important for achieving potentially high performance of graphene from both physics and practical viewpoints. This paper discusses metal/graphene contact...
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