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Here, we present the modeling of temperature effects in the surface potential based “Advanced Spice Model for High Electron Mobility Transistor” (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, gm and gds at multiple temperatures. Our model...
This work presents a physical analytical model for the total gate charge and C-V characteristics of AlGaN/GaN HEMT devices. A continuous analytical model of the gate-charge is developed first, based on an assumption of considering only the first energy level in the triangular quantum well approximation at the AlGaN/GaN interface where most of charge carriers reside. The gate-source and the gate-drain...
This work presents a physical compact model for A1GaN/GaN HEMT devices. An analytical model of the drain current has been developed based on models of the charge density in the 2DEG channel but considering only a single energy level. The approach resulted in an accurate and simple current model. The model covers all the different operation regions of a device. Excellent agreements with measured I-V...
We present an analytical calculation for the surface-potential and a surface-potential-based drain current model in AlGaAs/GaAs HEMT devices. We have developed a precise analytical calculation for the position of the Fermi level Ef in these devices from a consistent solution of Schrödinger's and Poisson's equations. The accuracy of our calculation is of the order of pico-volts. Ef is used to define...
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