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A p-GaN/AlGaN/GaN based normally-off HEMT device has been demonstrated on a Si substrate. Our p-GaN based device shows not only a high threshold voltage of 3 V but also low gate leakage current. Buffer and device breakdown voltages exceed 1600 V with 5.2 um GaN buffer thickness and specific on-state resistance is 2.9mΩ cm2. The calculated figure of merit is 921 MV2/Ωcm2, which is the highest value...