The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Vertical GaN based Light Emitting Diodes (VLED) on metal alloy base were realized and characterized for solid state lighting application. An operating voltage of less than 2.9 Voltage from a high efficiency and high power blue LED was achieved. And, an efficiency of more than 120 lumens/watt from a white LED was achieved also. The dissipate heat more effectively than conventional and flip-chip LEDs,...
SiC semiconductor-on-insulator (SOI) structures have been investigated as substrates for the growth of GaN films. The SiC SOI was obtained through the conversion of Si SOI wafers by reaction with propane and H2. (111) SiC SOI have been produced by this carbonization process at temperatures ranging from 1200 to 1300°C. X-ray diffraction (XRD) and infrared spectroscopy (FTIR) are used to chart the conversion...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.