The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We study the THz radiation emission from interdigitated Photo-Conductive Antennas (iPCAs) fabricated on Semi-insulating GaAs substrates and excited using 800nm, 10fs, 76MHz laser pulses through circular and cylindrical Microlens arrays put over the antennas. THz emission is an order of magnitude higher from cylindrical micro-lens array compared to circular micro-lens array, at the same bias voltage...
Taper waveguides for near field coupling have been designed by finite difference time domain simulations with Silicon core and SiO2 cladding. Thin metal layers above and below the core layer has improved the field profile making them suitable for on-chip near field couplers. These taper waveguides were used to study coupling of light to sub-wavelength metal particles.
We investigate surface plasmon polaritons of Fabry-Perot type in periodic metal-dieleetric gratings. They originate in addition to conventional Bloch plasmons only if the slit walls are covered with metal. The analytical models for both vertical and horizontal Fabry-Perot plasmons are developed and they demonstrate qualitative agreement with results of numerical simulations. The corresponding resonance...
We study the carrier lifetime in As implanted semi-insulating GaAs (SI-GaAs) using various dosages of the As-ion. Using infra-red (IR) pump and THz as a probe, we study the time resolved transmission curves at room temperature and calculate the lifetimes of the carriers in the SI-GaAs:As.
We study the emission mechanisms of THz radiation from InAs nanowires (NWs) using femtosecond infrared (IR) pump beam and THz probe in a time-resolved reflection geometry setup at room temperature. We compare the spectra of InAs NWs with that of a p-InAs crystal which is standard THz emitter.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.