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This paper presents voltage controlled MRAM (VCM) with novel fast read/write circuits for nonvolatile ultra-large last level cache. Further, write error rate has dramatically been reduced by thermal stability factor control using “continuous read-write-verify” scheme. Read error rate has also improved with “read-disturb-free non-destructive-self-reference read” with unipolar write of VCM.
Nonvolatile memory, spin-transfer torque magnetoresistive RAM (STT-MRAM) is being developed to realize nonvolatile working memory because it provides high-speed accesses, high endurance, and CMOS-logic compatibility. Furthermore, programming current has been reduced drastically by developing the advanced perpendicular STT-MRAM [1]. Several-megabit STT-MRAM with sub-5ns operation is demonstrated in...
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