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CuInSexS2–x quantum dot field‐effect transistors show p‐type, n‐type, and ambipolar behaviors with carrier mobilities up to 0.03 cm2 V–1 s–1. Although some design rules from studies of cadmium and lead containing quantum dots can be applied, remarkable differences are observed including a strong gating effect in as‐synthesized nanocyrstals with long ligands.
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