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Arrays of field‐effect transistors are described by Caroline Ross, Moon‐Ho Ham and co‐workers on page 4723. These are based on highly aligned sub‐10 nm graphene nanoribbons that are fabricated over large areas by etching CVD‐grown graphene, using a mask made by the directed self‐assembly of a cylindrical PS‐block‐PDMS block copolymer under solvent annealing guided by a removable template.
Sub‐10 nm Graphene Nanoribbon Arrays are fabricated over large areas by etching CVD‐grown graphene. A mask is used made by the directed self‐assembly of a cylindrical PS‐b‐PDMS block copolymer under solvent annealing guided by a removable template. The optimized solvent annealing process, surface‐modified removable polymeric templates, and high Flory‐Huggins interaction parameters of the block copolymer...
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