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We have studied the formation of nitrogen-related defects created in compound semiconductors by low-energy ion bombardment (0.3-5 keV N2+ or Ar+) using near-edge x-ray absorption fine structure (NEXAFS) around the N K-edge. Nitrogen interstitials and antisites have been identified in NEXAFS spectra of InN and GaN in full agreement with theoretical calculations. Several defect levels within the band...
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