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Decoration of nitrogen vacancies by oxygen atoms has been studied by near-edge x-ray absorption fine structure (NEXAFS) in several boron nitride (BN) structures, including bamboo-like and multi-walled BN nanotubes. Formation of nitrogen vacancies under low-energy ion bombardment reduces oxidation resistance of BN structures and promotes an efficient oxygen-healing mechanism, in full agreement with...
The valence electronic structure of the S-layer of Lactobacillus brevis is determined using synchrotron-based photoelectron spectroscopy and soft X-ray absorption spectroscopy. Spectra are compared to experimental work on amino-acids and S-layers of Bacillus sphaericus. While it is indeed possible to identify energy levels with those of natural amino-acids, distinct energy shifts are indeed observed...
We have studied the formation of nitrogen-related defects created in compound semiconductors by low-energy ion bombardment (0.3-5 keV N2+ or Ar+) using near-edge x-ray absorption fine structure (NEXAFS) around the N K-edge. Nitrogen interstitials and antisites have been identified in NEXAFS spectra of InN and GaN in full agreement with theoretical calculations. Several defect levels within the band...
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