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The rates of decomposition of carbon tetrachloride (CCl4), triethylgallium (TEGa), and tertiarybutylarsine (TBAs), and the rate of GaAs film growth, were measured as a function of the process conditions during organometallic vapor phase epitaxy. In addition, the reaction of CCl4 with the GaAs(001) surface was monitored in ultrahigh vacuum using infrared spectroscopy, temperature-programmed desorption,...
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