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Epitaxial growth structures for (SiC)1-x(AlN)x alloys are studied using a layered growth model. First-principle calculations are used to determine the parameters in the layered growth model. The phase diagrams of epitaxial growth are given. There is a rich variety of the new metastable polytype structures at x=16,15,14,13, and 12 in the layered growth phase diagrams. We have also calculated the electronic...
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