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Defect engineering is promising to tailor the physical properties of 2D semiconductors for function‐oriented electronics and optoelectronics. Compared with the extensively studied 2D binary materials, the origin of defects and their influence on physical properties of 2D ternary semiconductors are not clarified. Here, the effect of defects on the electronic structure and optical properties of few‐layer...
Electric Double Layer Devices
In article number 2301798, Cheng‐Yan Xu, Yang Li, and co‐workers showcase the structure of electrical double layer at the interface of Li2Al2SiP2TiO13 solid electrolyte and WSe2, emphasizing the interactions between ions and electrons, along with the verification of potential distribution at the 2D/electrolyte interface using atomic force microscope.
Electric double layer (EDL) devices based on 2D materials have made great achievements for versatile electronic and opto‐electronic applications; however, the ion dynamics and electric field distribution of the EDL at the electrolyte/2D material interface and their influence on the physical properties of 2D materials have not been clearly clarified. In this work, by using Kelvin probe force microscope...
Heterostructures play an irreplaceable role in high‐performance optoelectronic devices. However, the preparation of robust perovskite heterostructures is challenging due to spontaneous interdiffusion of halogen anions. Herein, a vapor‐phase anion exchange method universally suitable for the preparation of robust 2D Ruddlesden–Popper perovskite (RPP) heterostructures is developed. A variety of heterostructures...
Herein, an all‐solid‐state sequential self‐organization and self‐assembly process is reported for the in situ construction of a color tunable luminous inorganic/polymer hybrid with high direct piezoresponse. The primary inorganic self‐organization in solid polymer and the subsequent polymer self‐assembly are achieved at high pressure with the first utilization of piezo‐copolymer (PVDF‐TrFE) as the...
2D semiconducting transition metal dichalcogenides (TMDs) are endowed with fascinating optical properties especially in their monolayer limit. Insulating hBN films possessing customizable thickness can act as a separation barrier to dictate the interactions between TMDs. In this work, vertical layered heterostructures (VLHs) of WS2:hBN:WS2 are fabricated utilizing chemical vapor deposition (CVD)‐grown...
Ultraviolet (UV) light can be used in versatile applications ranging from photoelectronic devices to biomedical imaging. In the development of new UV light sources, in this study, stable UV emission at ≈350 nm is unprecedentedly obtained from carbon nanospheres (CNSs). The origin of the UV fluorescence is comprehensively investigated via various characterization methods, including Raman and Fourier...
The 2D semiconductor monolayer transition metal dichalcogenides, WS2 and MoS2, are grown by chemical vapor deposition (CVD) and assembled by sequential transfer into vertical layered heterostructures (VLHs). Insulating hBN, also produced by CVD, is utilized to control the separation between WS2 and MoS2 by adjusting the layer number, leading to fine‐scale tuning of the interlayer interactions within...
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