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Cu2O is a p-type semiconductor that has demonstrated attractive photovoltaic properties, but its efficiencies have been limited by surface instability and lack of high quality thin films. In this work, plasma-assisted molecular beam epitaxy is used to precisely control film orientation and interface chemistry of Cu2O heterostructures. Thin films of Cu2O are deposited by MBE onto thin films of Pt and...
Cu2O is a p-type semiconductor with desirable bulk properties for photovoltaics. However, the lack of an n-type dopant and surface instability have hindered the development of a high efficiency Cu2O device. In this work, the floating zone method is used to grow high quality single crystals of Cu2O in order to controllably study the interfacial reactions between Cu2O and its heterojunction partners...
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