The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Uni-traveling-carrier photodiodes with novel dual-drifting-layer structure is proposed to realize wide bandwidth and high saturation power performance. High-speed operation at high bias voltage is demonstrated by optimizing the electric field profile within the dual-drifting-layer structure.
Depletion region of uni-traveling-carrier photodiodes (UTC-PDs) is optimized. Wide bandwidth of 28.5 GHz and high saturation photocurrent of 38 mA at 20 GHz are achieved for a 14-µm diameter device.
Novel back-to-back uni-traveling-carrier photodiodes are proposed and demonstrated. High responsivity of 0.83 A/W and wide bandwidth over 40 GHz are realized simultaneously in mesa-structure photodiodes for the first time.
A novel back-illuminated mesa-structure back-to-back uni-traveling-carrier photodiode (UTC-PD) is proposed and realized. By stacking two UTC-PDs to form a PINIP structure, high responsivity, high output saturation power, and wide bandwidth are achieved simultaneously. The responsivity of a 24- -diameter device is as high as 0.86 A/W, and a 3-dB bandwidth up to 28.3 GHz is attained. The saturation...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.