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Si crystals and nano-rods were formed in Al-added amorphous Si films (a-Al x Si 1−x ; 0.025⩽x⩽0.100) by the irradiation of a focused electron-beam; the films were in situ heated to be kept at 400°C and the current density of the electron-beam was 15.7pA/cm 2 . The size, shape, and concentration of the Si crystallites were varied sensitively with the Al content as well...
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