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In this work, heavily doped ZnO thin films with carrier concentrations of 1.7 × 1020–1.1 × 1021 cm−3 were prepared on glass substrates using direct current magnetron sputtering combined with rapid thermal annealing (RTA). The effects of RTA on the electrical transport properties of the thin films were investigated. Results showed that the resistivities of the thin films deposited at low temperatures...
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