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CeO2 films were prepared at deposition temperature ranged from 947 to 1096 K (corresponding laser power was from 52 to 185 W) on (100) LaAlO3 single crystal substrate by laser chemical vapor deposition. At deposition temperature of 1027–1096 K (laser power was from 115 to 185 W), highly (100)‐oriented CeO2 films with wedge‐caped columnar grains were prepared, whose epitaxial growth relationship was...
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