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Delamination between copper and epoxy molding compound (EMC) is one of the common failure modes in packages due to relatively weak adhesion at the interface. Delamination is difficult to predict because a package is often with a complex structure design constructed with different materials and under combined normal and shear loading. Development of cohesive zone elements applied in FEM has emerged...
Delamination of interfaces is known as one of the root causes of failure in microelectronic industry and therefore is getting more and more attention. In order to be able for judging the risk of the interface fracture, the critical fracture properties of the interfaces should be available i.e. Interfacial fracture toughness. Interfacial fracture toughness is highly dependent to temperature, moisture...
The present study deals with experimental investigation of the delamination toughness of EMC (epoxy molding compound) and Copper-leadframe interfaces. Test samples were directly obtained from the production line. EMC is attached on copper substrates with various surface treatments. Mixed mode bending experiments were performed under various temperature and moisture environments. The test procedure...
Interface delamination is one of the most important issues in the microelectronic packaging industry. Silver filled die attach is a typical adhesive used between the die and copper die pad for its improved heat dissipation capacity. Delamination between die attach and die pad will severely impact the heat conduction and result in product failure. In order to predict this delamination, interface properties...
The homoepitaxial growth of Cu on Cu(001) has been investigated with low-energy electron microscopy (LEEM). The temporal evolution of engineered pyramid-like structures has been monitored for a range of incident Cu fluxes and substrate temperatures. The step velocities have been analyzed in the framework of a novel growth model that contains as the only adjustable parameter the height of the Ehrlich-Schwoebel...
The bombardment of Cu(001) with Ar ions at substrate temperatures between 100 K and ca 300 K leads to the formation of pyramid-like void structures with specific angle selections between the base and the sides of the pyramids. This structure is largely reciprocal to the morphology produced in the growth of Cu on Cu(001) in the sense that adatom pyramids are replaced by vacancy pyramids. Their...
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