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Laterally actuated nanoelectromechanical relays with compliant source-drain contacts are presented. The relay sidewalls are coated with a 30 nm-thick conductive layer of titanium nitride (TiN) deposited using atomic layer deposition (ALD). By hollowing the tip of the relay, a flexible sidewall is formed from the thin TiN that results in a larger contact area and therefore improves the contact properties...
In recent years, pulsed power systems have gained importance for the pulsed electron beam generation for industrial and defense applications. High voltage Energy storage capacitors were being used widely worldwide for the pulsed power system in electric field. In case of capacitive energy storage system, the size of the system is decided by capacitor size which depends on dielectric strength and relative...
This paper reports on lateral nanoelectromechanical (NEM) relays based on variations of a two- or three-mask titanium nitride (TiN) sidewall stringer process. Electrically isolated TiN perimeter beams are fabricated from stringers formed on the inside walls of polysilicon trenches, yielding 200 nm wide TiN fins and 200 nm gaps; these dimensions are 3X smaller than the resolution limit of the optical...
The present work addresses probabilistic solution of two fundamental issues of cellular mobile environment maintaining a common set of information. One of the issues is to predict the location of a mobile user whereas the other is to predict the traffic load of each area and accordingly distribute channels among different areas. For location management the entire area covered by cellular architecture...
Three-dimensional die stacking integration provides the ability to stack multiple layers of processed silicon with a large number of vertical interconnects. Through Silicon Vias (TSVs) provide a promising area- and power-efficient way to support communication between different stack layers. Unfortunately, low TSV yield significantly impacts design of three-dimensional die stacks with a large number...
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