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Carbon Nanotube Field Effect Transistors (CNFETs), consisting of semiconducting single-walled Carbon Nanotubes (CNTs), show great promise as extensions to silicon CMOS and in large-area electronics. While there has been significant progress at a single-device level, a major gap exists between such results and their transformation into VLSI CNFET technologies. Major CNFET technology challenges include...
We demonstrate carbon nanotube field effect transistors (CNFETs) using asymmetrically-correlated carbon nanotubes (ACCNT, pronounced ldquoaccentrdquo), the first demonstration of a VLSI-compatible metallic-CNT-tolerant design methodology. ACCNT CNFETs take advantage of the asymmetric correlation of CNFETs fabricated on aligned carbon nanotubes to achieve both high Ion/Ioff (up to 5 times 104) and...
Carbon nanotube field-effect transistors (CNFETs) show promise as extensions to silicon-CMOS. Ideal CNFET circuits can potentially provide 20X energy-delay-product benefits over silicon-CMOS at the 16 nm technology node. However, several challenges must be overcome before such performance benefits can be experimentally realized. In this paper, we present a brief overview of CNFET technology, and address...
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