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We experimentally demonstrate, for the first time, a new metallic carbon nanotube (CNT) removal technique that can be readily scaled to full-wafer-scale. Existing metallic CNT removal techniques either do not remove enough metallic CNTs, or are not VLSI-compatible, or impose very large area costs when applied to wafer-scale VLSI (up to 200%). In contrast, our new technique retains VLSI-compatibility,...
We demonstrate carbon nanotube field effect transistors (CNFETs) using asymmetrically-correlated carbon nanotubes (ACCNT, pronounced ldquoaccentrdquo), the first demonstration of a VLSI-compatible metallic-CNT-tolerant design methodology. ACCNT CNFETs take advantage of the asymmetric correlation of CNFETs fabricated on aligned carbon nanotubes to achieve both high Ion/Ioff (up to 5 times 104) and...
We successfully demonstrate essential components and their integration for large-scale carbon nanotube field effect transistor (CNFET) technology: 1. First demonstration of full-wafer-scale growth of directional carbon nanotubes (CNTs) on 4" single-crystal quartz wafers. 2. First demonstration of full-wafer-scale CNT transfer from 4" quartz wafers to 4" silicon wafers for integration...
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