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We investigate the performance of aluminum nitride (AlN)-based solidly mounted resonators (SMR) made with iridium (Ir) electrodes for applications in WCDMA filters. Ir/AlN/Ir stacks are grown on top of insulating Bragg mirrors composed of alternate lambda/4 layers of silicon oxycarbide (SiOC) and silicon nitride (Si3N4). We have developed the technological processes for the fabrication of filters...
We present picosecond ultrasonic characterizations on e-beam evaporated Ir thin films and on AlN films deposited by pulsed DC reactive sputtering on Ir. Picosecond ultrasonics is an optical technique which uses ultrashort laser pulses to generate and detect very short acoustic pulses. We first investigate the properties of the Ir films by measuring samples of various thicknesses and deposition parameters...
Bulk acoustic wave (BAW) test resonators in the frequency range between 1.8 to 1.9 GHz were fabricated with piezoelectric aluminum nitride (AIN) films sputtered on iridium (Ir) bottom electrodes. The crystal structure and piezoelectric response of AIN films grown on Ir were as good as those of the best AIN films grown on other metallic electrodes, like platinum (Pt), molybdenum (Mo) or tungsten (W)...
We report the growth of highly c-axis-textured aluminum nitride (AlN) films deposited by sputtering on evaporated iridium (Ir) layers. The crystal quality of the polycrystalline AlN films is analyzed as a function of the deposition conditions of the Ir electrode, which include the substrate temperature and the use of various seed layers, such as AlN, Ti and Ti/Mo. The influence of the sputter parameters...
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