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Engineering the band gap of semiconductors is often crucial in the quest for developing new and advanced technologies. In this report, the implication of graphene on the band gap optimization of tungsten trioxide (WO3) is discussed. Simple one-step sol–gel process was followed to anchor WO3 nanoparticles in graphene. Graphene induces a redshift in the band gap of WO3. Band gap narrowing of 6.60% is...
A lead-free dielectric material [Bi(Zn2/3Ta1/3)O3] has been prepared using a solid state reaction technique at high-temperature. The resistive, conducting and capacitive characteristics of the prepared electronic material have been studied in different experimental conditions. The determination of basic crystal parameters and reflection indices confirm the development of polycrystalline compound with...
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