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We have described Stranski–Krastanow growth of multilayer In(Ga)As/GaAs QDs on Ge substrate by MBE. The growth technique includes deposition of a thin germanium buffer layer followed by migration-enhanced epitaxy (MEE) grown GaAs layer at 350°C. The MEE layer was overgrown by a thin low-temperature (475°C) grown GaAs layer with a subsequent deposition of a thick GaAs layer grown at 590°C. The sample...
Single-walled carbon nanotubes (SWNTs) have been precisely aligned and positioned in device architectures using ac dielectrophoresis by patterning floating metal posts or strips within the electrode gaps. These structures perturb the electric field, causing local enhancements in the field intensity, as seen in simulation, that guide the nanotubes along a predictable path in given directions, in zigzag...
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