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To increase channel mobility beyond Si's physical limits, Ge is being intensively investigated as high- mobility channel material for potential high-speed circuit applications. Ge pMOSFETs have been demonstrated with an hole mobility enhancement by using stained or relaxed Ge-on-Si heterostructures. One of the issues, however, is the uncontrolled (normally positive) threshold voltages (Vt), which...
Shallow junctions formed on thin Ge-on-Si heterostructures are characterized in this paper. The reverse leakage current showed a strong dependence on the Ge thickness, which is believed to be due to the different activation temperature of ions implanted in the Ge layers and in the Si substrates. Ge pMOSFETs fabricated on thin Ge layers showed more significant improvement in short channel effects (SCEs)...
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