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In this article we demonstrate a Ge p-channel QWFET with scaled TOXE = 14.5Å and mobility of 770 cm2/V*s at ns =5×1012 cm-2 (charge density in the state-of-the-art Si transistor channel at Vcc = 0.5V). For thin TOXE <; 40 Å, this represents the highest hole mobility reported for any Ge device and is 4× higher than state-of-the-art strained silicon. The QWFET architecture achieves high mobility...
This paper describes integration of an advanced composite high-K gate stack (4nm TaSiOx-2nm InP) in the In0.7Ga0.3As quantum-well field effect transistor (QWFET) on silicon substrate. The composite high-K gate stack enables both (i) thin electrical oxide thickness (tOXE) and low gate leakage (JG) and (ii) effective carrier confinement and high effective carrier velocity (Veff) in the QW channel. The...
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