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Independent gate control in double-gate devices enhances the circuit performance and robustness while substantially reducing leakage and chip area. In this paper, we have explored the circuit techniques for a DP4T RF CMOS switch, which is an application of the independent double-gate MOSFET with symmetrical gate at 45-nm technology design and analyzed the better drain current, output voltage, ON resistance,...
In this paper, we have explored the drain current model and subthreshold model of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs, for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. This CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes. We emphasize on the...
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