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The continuous CMOS performance improvement enhances the interest of the RF CMOS for millimeter wave application. Hence the extension of DC reliability model in the RF domain is becoming critical. Understanding the MOSFET aging influence on the small signal equivalent circuit is a key concern to integrate the RF reliability simulation at compact model level. In this work, an accurate setup which allows...
RF reliability is becoming an increasing concern for actual technology platforms. In this context, small signal equivalent circuit degradation under hot carrier stress is investigated. It is shown that some lumped elements such as the conductance, the transconductance, the gate-to-drain capacitance, and series resistances are degraded. The application of corrections based on physical phenomenon explains...
Hot-Carrier degradation is analyzed with 3 mode lifetime modeling extended to the cases of PMOSFETs and Off state modes in last CMOS nodes. Damage worsens in subthreshold region with positive temperature activation due to interface traps generation in the gate-drain overlap (GDO) and localized charge trapping into the spacer oxide. Care has been done on the distinct impact of the measuring bias and...
Continuous scaling, necessary for enhanced performance and cost reduction, has pushed existing CMOS materials much closer to their intrinsic reliability limits, forcing reliability engineers to get a better understanding of circuit failure. This requires that designers will have to be very careful with phenomena such as high current densities or voltage overshoots. In addition to the reliability issues,...
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