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MOSFETs were fabricated on both thick and thin epi SiGe films. An ultra thin (~ 1- 2 nm) epi Si cap grown on the SiGe layers serves to separate the Ge from the high k dielectric as well as form a SiO2 interfacial layer between the SiGe channel and the high k gate dielectric. There is evidence that this cap layer is completely oxidized during the ozone based ALD high k deposition process. Both epitaxial...
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