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In this paper we present a study of the neutrons-induced damage in Silicon Photo-Multipliers. Twenti-six devices, produced by AdvanSiD, Hamamatsu and SensL, have been irradiated at the Geel Electron LINear Accelerator (GELINA) in Belgium on a nearly white neutron beam. The total 1 MeV equivalent integrated dose was 6.2×109neq/cm2. Photodetector performances have been measured during the whole irradiation...
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