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We demonstrate, for the first time, modulation of power-performance of a ring oscillator fabricated on thin-BOX (buried oxide) FD (fully-depleted) SOI using independent backgate controls for nFET and pFET. The thin BOX facilitates an effective modulation of ring characteristics with small (1-2V) independent backgate voltages. Leakage current per stage can be reduced by more than 100times with 30%...
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