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The impact of the Ge pre-amorphization conditions on shallow B profiles, resulting from a 1keV implantation in n-type Ge and a 500°C 1min rapid thermal anneal, is investigated. In general, an increase of the sheet resistance with lower Ge energy is observed. There is some evidence for tail diffusion, enhancing slightly the junction depth and reducing its steepness. This could point to end-of-range-mediated...
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