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Simulation investigations on 4H-SiC based double-drift avalanche-transit-time diode clearly establishes it's potential at higher terahertz region. Further, the effects of punch-through on the terahertz behavior of the device are studied for the first time, through a generalized simulation technique. The computed results revealed that for a fixed bias current density, when the space-charge effect is...
The millimeter and sub-millimeter wavelength range for a long time has been used in many research applications. This frequency range has been utilized in spectroscopy, radio astronomy, plasma diagnostics, and the study of the earth's atmosphere. Even millimeter waves are now used in commercial applications as well, particularly in the security sector. An example of a solid-state source of this range...
Wide-Band-Gap (WBG) alpha (4H and 6H)-SiC and beta(3C)-SiC based double drift region (DDR, p+p n n+ type), IMPATT devices are designed at sub-millimeter wave (Terahertz) region and their high frequency characteristics are compared for the first time through an extensive simulation experiment. The study indicates that at around 0.3 THz, alpha(4H)-SiC based IMPATT device can yield a RF power (PRF) of...
Reliability of terahertz-frequency (~1.0 THz) characteristics of wide-bandgap (WBG) wurtzite (Wz)-GaN- and 4H-SiC-based p++nn++-type single-drift-region (SDR) impact avalanche transit time (IMPATT) devices (normal and photoilluminated) is compared through a simulation scheme. The simulation experiment reveals that an RF power density of 3.37 times 1011 W middotm-2 (efficiency of 18.2%) at around 1...
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