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The prospects of single drift region (SDR), flat profile GaN IMPATT diode as terahertz source are studied through a simulation experiment. The study indicates that GaN IMPATT device is capable of generating high RF power (PRF) of 14.4 W at around 0.7 THz with an efficiency of 20.0 %. The effects of photo-illumination on the GaN device is also investigated using a modified double iterative simulation...
The Single Drift Region ( SDR, p+ n n+ type) cubic silicon carbide (3C-SiC/B-SiC) based IMPATT diode is designed and studied for the first time at terahertz (THz) frequency region. The simulation predicts that the device is capable of generating output RF power of 63.0 W with 13% efficiency at 0.330 THz. The effect of parasitic series resistance on the RF power level of the device is further simulated...
The dynamic properties of an InP p pnn IMPATT diode at 0.5 terahertz are studied through a simulation experiment. The study indicates that the InP IMPATT may deliver 27.0 mW of RF power at 0.5 terahertz with an efficiency of 6.3%. However, the realistic consideration of series resistance has imitational effect on exploitable power level from the THz device. The effects of photo-illumination on the...
The dynamic properties of a 4H-SiC low-high- low double drift IMPATT diode operating at 0.5 THz region are studied through a simulation experiment. The study indicates that 4H-SiC IMPATT is capable of generating high RF power (3.7W) at 0.515 terahertz with high efficiency (13.5 %). However, the parasitic series resistance is found to produce a 10 % reduction in the negative conductance and the RF...
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