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The dynamic properties of an InP p pnn IMPATT diode at 0.5 terahertz are studied through a simulation experiment. The study indicates that the InP IMPATT may deliver 27.0 mW of RF power at 0.5 terahertz with an efficiency of 6.3%. However, the realistic consideration of series resistance has imitational effect on exploitable power level from the THz device. The effects of photo-illumination on the...
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