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In this paper, we present a data acquisition and analysis framework for materials-to-devices processes, named 4CeeD, that focuses on the immense potential of capturing, accurately curating, correlating, and coordinating materials-to-devices digital data in a real-time and trusted manner before fully archiving and publishing them for wide access and sharing. In particular, 4CeeD consists of novel services:...
We report the first demonstration of an InP double heterojunction bipolar transistor (HBT) transferred to a higher thermal conductivity substrate. This process allows lithographic access to both the frontside and backside of the device to minimize parasitic capacitances while transfer to a SiC substrate should reduce junction temperature by 42%, allowing for higher current density operation. The ...
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