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In this study, we are focusing on the detailed control of the size and density of nanoparticles on the substrate by employing the gas-phase catalyst. To fabricate iron (Fe) nanoparticles as catalyst, Fe(CO)5 gas was used. Size and density of the nanoparticles can be controlled by varying the experimental parameters, such as the molar flow rate, the decomposition temperature and the flow time. Quartz...
Field electron emission from silicon emitter is attractive one of electron source because not only it can be integrated with functional circuits, but also can be achieved high performance. The characteristic of field emission from silicon emitter, however, is different from metals: there is an obvious peak shift of the electron energy distribution (Si-EED) with external field. The surface states are...
In this paper we report the electron emission from sol-gel derived BaTiO3 thin films pretreated in hydrochloric acids. Using a conventional sol-gel technique, we obtained 1 mum thick BaTiO3 ferroelectric thin films onto Ni-Cr substrate. These thin films were pretreated for 45 seconds in concentrated hydrochloric acid (HCl) in order to increase the surface roughness.
Electron emission from ferroelectric cathodes by the fast switching of the spontaneous polarization has been studied due to its potential application to vacuum electronics. The purpose of this paper is to obtain electron emission from BaTiO3 thin films at low applied voltage. In this work some results on the preparation of BaTiO3 thin films ferroelectric cathodes by sol-gel and screen printing methods...
A metal-oxide-semiconductor cathode has been fabricated based on nanocrystalline silicon prepared by a pulsed laser ablation technique. The emission current and the transfer ratio are sensitive to the thickness of the gate electrode. Electron emission occurs at the extraction voltage as low as the work function of the top electrode. The transfer ratio is improved to 4% by reducing the thinness to...
We have fabricated novel supper-induced graphite nanoneedle field emitters and Si electron- transparent films for application to electron-beam- pumped light sources. The field emitters exhibited a stable electron emission of 10 muA at an average field of 6V/ mum. The 1.5-mum-thick Si electron-transparent film with an aperture ratio of 75% achieved an electron transmittance of about 60% at an acceleration...
We have fabricated novel sputter-induced carbon nanoneedle field-emitters and Si electron-transparent films for application to electron-beam-pumped light sources. The sputter-induced carbon nanoneedle field-emitters exhibited a stable electron emission of 10 muA at an average field of 6V/mum. The 1.5mum-thick Si electron-transparent films achieved an electron transmittance of about 60% at an acceleration...
The paper describes emission characteristics of semiconductor cold cathodes such as Si-field emitters and metal-oxide-semiconductor (MOS) electron tunneling emitters, and shows that their characteristics reflect the semiconductor property or the electron transport in an incorporated semiconductor device. The paper also describes Smith–Purcell radiation experiment as one of the device applications...
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