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The electron and hole injection statistics of BE-SONOS NAND Flash is studied for the first time using a 75 nm charge-trapping NAND Flash test chip. By using the incremental step pulse programming (ISPP) method the impact of device variations are minimized and the electron number (N) fluctuation can be identified. We find that both electron and hole injection statistics well follow the Poisson statistics...
This paper presents a photon beam position monitor using beam profile and emittance measurement system for HLS (Hefei Light Source). Using this monitor, we calculated the horizontal and vertical center positions of the beam profile, and then we calibrated these positions with BPM system. When changed the RF frequency, the horizontal and vertical dispersions at the place of beam profile monitor could...
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