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A variety of cell performances, such as program speed, second-bit effect, program disturbance along the channel direction (X-disturbance), and random telegraph noise (RTN), are investigated extensively under different junction dosages in a virtual-ground charge-trap nor array of 45-nm technology. Junction profiles and the location of programmed charges are compared by means of a gate-induced drain...
A vertical channel SONOS memory, which is compatible with current CMOS process and has four physical storage nodes per unit area, is fabricated and electrically evaluated. Comparing with a planar device, the array cell tuning is much easier since the channel length is no longer limited by array area. After reviewing key performances including program/erase (P/E) speeds, second bit effect, program...
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