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In this paper, I present recent progresses on epitaxial growth and material characterizations of novel dilute III-PBi and III-SbBi. High quality dilute bismide thin films can be epitaxially grown by molecular beam epitaxy in a narrow growth parameter window. Up to 13% and 4.3% Bi is incorporated in GaSbBi and InPBi, respectively, and majority Bi atoms are at the lattice position as confirmed by Rutherford...
InPBi crystalline thin films with a bismuth concentration up to 4.8% have been successfully grown using molecular beam epitaxy for the first time. This novel material reveals strong and broad photoluminescence in the wavelength range of 1–2.5 μm at room temperature, although the absorption measurements point out a near band-gap absorption character. Various structural and optical characterization...
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