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A novel small‐molecule boron(III)‐containing donor–acceptor compound has been synthesized and employed in the fabrication of solution‐processable electronic resistive memory devices. High ternary memory performances with low turn‐on (VTh1=2.0 V) and distinct threshold voltages (VTh2=3.3 V), small reading bias (1.0 V), and long retention time (>104 seconds) with a large ON/OFF ratio of each state...
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