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We report on SEE and TID tests of highly scaled Samsung 2Gbits flash memories. Both in-situ and biased interval irradiations were used to characterize the response of the total accumulated dose failures. The radiation-induced failures can be categorized as followings: single event upset (SEU) read errors in biased and unbiased modes, write errors, and single-event-functional-interrupt (SEFI) failures
Summary form only given. In addition to single event upsets during read and write operations, like many other digital devices with internal state machines and operating modes, NAND flash devices are also susceptible to single event functional interrupts (SEFI). Due to the increasing complexity of device architectures, the ability detect and characterize the SEFI events is emerging as the primary challenge...
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