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C60-based organic thin film transistors (OTFTs) with high electron mobility and high operational stability are achieved with (111) oriented C60 films grown by using template effects of diindenoperylene (DIP) under layer on the SiO2 gate insulator. The electron mobility of the C60 transistor is significantly increased from 0.21cm2V−1s−1 to 2.92cm2V−1s−1 by inserting the template-DIP layer. Moreover...
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