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We investigated the effect of InAlAs layer thickness on exciton-spin relaxation and optical properties of In0.62Al0.38As/Al0.67Ga0.33As QDs. The luminescence properties and carrier dynamics of QDs were studied by the temperature-dependent photoluminescence (PL) and pump-probe measurements. As the total amount of deposited In0.62Al0.38As alloy increased, the central position of the low-energy PL signal...
The quantum dot size dependence of spin lifetimes and fine structure are studied by polarization-resolved photoluminescence experiments on InAlAs self-assembled quantum dots. Hanle measurements reveal that the dots dimensions influence the scaled spin lifetime ( gxeTs $\mathrm {g}_{\mathrm {x}}^{\mathrm {e}}\mathrm {T}_{\mathrm {s}}$) and the transverse Landé-g factor ( gxe) $\mathrm {g}_{\mathrm...
Magneto-photoluminescence spectroscopy measurements were performed on self-assembled InGaAs/GaAs quantum rings. We report exciton exchange energy as a function of interband emission energy; we measure a decrease from 163 μeV to 43 μeV in the range of 1.30 eV to 1.40 eV. This result is remarkable and compatible with the exciton exchange energy in self-assembled InAs/GaAs quantum dots. Our results reveal...
This paper presents a study of rapid thermal annealing (RTA) effects on self-assembled In(Ga)As/GaAs quantum dots (QDs) using Raman scattering and photoluminescence (PL) spectroscopy. The PL dependence on excitation shows the existence of two size distributions of QDs (small and large) after annealing. However, Raman scattering shows one longitudinal optical (LO) phonon peak of the QD. We have presented...
Exciton spin relaxation in self-assembled InAIAs quantum dots (QDs) was investigated by pump-probe under resonant conditions. Time-resolved photoluminescence and resonant pump-probe were performed, at variable temperature. At low temperature, a long-spin relaxation time has been measured, in agreement with the OD zero-dimensional confinement and the quenching of the relaxation mechanisms. When the...
. Exciton recombination dynamics in vertical stacks of InGaAs quantum rings have been studied by means of continuous wave and time resolved photoluminescence under low excitation density conditions. We have paid special attention to the effect of the carrier coupling on the exciton radiative lifetime: weak (14 nm spacer sample), intermediate (4.5 nm spacer sample), where the size filtering effects...
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