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We report the highest power narrow spectrum 1180 nm distributed Bragg reflector (DBR) laser diodes prepared using GaInNAs quantum wells as a gain material. In particular, we demonstrate a CW output power up to 560 mW from Ridge Waveguide (RWG)-DBR laser diodes and up to 2.75W for Tapered DBR-LDs. The demonstration targets applications in second harmonic generation (SHG) for generating high brightness...
We report a comparison between the high-speed gain and absorber dynamics of dilute nitride laser structures utilising GaAs or GaAsN barrier layers. The inclusion of dilute nitride barriers greatly reduces the absorber recovery time. The wafers were processed into two-section monolithic mode-locked lasers generating 2-5 ps pulses at 40 GHz.
<para> We report a mode-locked antimonide-based semiconductor disk laser operating at 2 m, synchronously pumped with a pulsed source incorporating a 1.57- m diode laser, a lithium niobate intensity modulator, and an erbium-doped fiber amplifier. The method for producing the pump signal utilizes commercially available telecom components and allows for convenient selection of the mode-locking...
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