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In this paper, we present a semi-analytical model tailored for nitride Charge-Trap TriGate (CT-3G) non-volatile memories under uniform stress: Fowler-Nordheim (FN) program (P) and erase (E) performances are reproduced. This model presents innovations in the tunnelling current calculation at corners through the Hankel function formalism. The validation of the model is operated through extensive comparisons...
Here we present a semi-analytical model for nanocrystal-based (NCs) FinFLASH memories under uniform stress: Fowler-Nordheim (FN) write/erase, gate disturb and data retention are addressed. This model is able to catch the essential features related to the non-uniform trapped charge distribution in such a complex 3D structure. Both body tied and SOI devices are included in the model. Main conclusions...
Tri-gate FinFlash devices are one of the most promising solutions to solve scaling problems of Flash memories. The use of Silicon Nanocrystal storage nodes in novel 3D FinFET architecture offers the possibility of scaled gate dielectrics (implying scaled operating voltages), along with short channel effect immunity and higher sensing current drivability. In this paper, we investigate the channel length...
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